Part Number Hot Search : 
93LC76 AS9191AJ 78M08 K9HBG P6KE27 74AC10 LTC4222 04C12
Product Description
Full Text Search
 

To Download 2SK1958 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  2SK1958 the 2SK1958 is an n-channel vertical mos fet. because it can be driven by a voltage as low as 1.5 v and it is not necessary to consider a drive current, this fet is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. features ? gate can be driven by 1.5 v ? because of its high input impedance, theres no need to consider drive current ? since bias resistance can be omitted, the number of components required can be reduced absolute maximum ratings (t a = 25 ?c) parameter symbol test conditions rating unit drain to source voltage v dss v gs = 0 16 v gate to source voltage v gss v ds = 0 7.0 v drain current (dc) i d(dc) 0.1 a drain current (pulse) i d(pulse) pw 10 ms, duty cycle 50 % 0.2 a total power dissipation p t 150 mw channel temperature t ch 150 ?c storage temperature t stg C55 to +150 ?c package dimensions (in mm) marking: g21 1.25 ?.1 2.1 ?.1 d 0.3 +0.1 ? 0.3 +0.1 ? g s 2.0 ?.2 0.65 0.65 0.15 +0.1 ?.05 0 to 0.1 0.3 0.9 ?.1 marking equivalent curcuit source (s) internal diode gate protection diode gate (g) drain (d) pin connections s: d: g: source drain gate product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25 ?c) parameter symbol test conditions min. typ. max. unit drain cut-off current i dss v ds = 16 v, v gs = 0 1.0 m a gate leakage current i gss v gs = 7.0 v, v ds = 0 3.0 m a gate cut-off voltage v gs(off) v ds = 3 v, i d = 10 m a 0.5 0.8 1.1 v forward transfer admittance |y fs |v ds = 3 v, i d = 10 ma 20 ms drain to source on-state resistance r ds(on)1 v gs = 1.5 v, i d = 1 ma 20 50 w drain to source on-state resistance r ds(on)2 v gs = 2.5 v, i d = 10 ma 7 15 w drain to source on-state resistance r ds(on)3 v gs = 4.0 v, i d = 10 ma 5 12 w input capacitance c iss v ds = 3 v, v gs = 0, f = 1.0 mhz 10 pf output capacitance c oss 13 pf reverse transfer capacitance c rss 3pf turn-on delay time t d(on) v dd = 3 v, i d = 10 ma, v gs(on) = 3 v, 15 ns rise time t r r g = 10 w , r l = 300 w 70 ns turn-off delay time t d(off) 100 ns fall time t f 110 ns 2SK1958 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com


▲Up To Search▲   

 
Price & Availability of 2SK1958

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X